This web site is an attempt to display and describe the major components of a high current ion implanter. It uses a series of clickable image maps to help navigate. Move your cursor to the various components on the maps and view the scroll bar at the bottom your browser for a brief description. Click on the component with your left mouse button for detailed information.

  The ion beam implanter is used to alter the near surface properties of semiconductor materials. Typical machines used in the manufacture of electronic devices use beam energies from 2keV up to 2MeV. The implanter described here has an energy range from 0.5keV to 50keV.

 The ion source is a radio frequency (RF), multi cusp ion source that uses a SDS gas delivery system to produce the desired beam species. The beam then passes through a pre acceleration section, known as the source extraction . The bias voltage gives the beam sufficient energy to allow selection of the desired species required for implantation by a 90deg. dipole analyzing magnet.

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This page is sponsored by Case Technology Inc.  since 5/1/98.

Updated 6/6/99.